Bi-directionally Controlled Thyristors

The BCT consists of two anti-parallel high power thyristors integrated on a single silicon wafer with separate gate contacts. The reduction in component count results in lower cost and higher reliability. For other wafer diameters and lower voltages please contact the factory.

  • Two anti-parallel thyristors on one Si-wafer.
  • Patented free-floating silicon technology.
  • Design for high power industrial and power transmission applications.
  • Matched Qrr values available for series connection.
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Item #

Data Sheet

VSM

IRMS at TC=70ºC

ITAVM at TC=70ºC

ITSM at 8.3 ms TVJM

Housing

5STB 13N6500

5STB 13N6500.pdf

N/A

3120 A

1405 A

N/A

N

5STB 17N5200

5STB 17N5200.pdf

N/A

4000 A

1800 A

31 kA

N

5STB 18N4200

5STB 18N4200.pdf

4200 V

4260 A

1920 A

32 kA

N

5STB 18U6500

5STB 18U6500.pdf

N/A

3510 A

1580 A

N/A

U

5STB 24N2800

5STB 24N2800.pdf

2800 V

5400 A

2430 A

46 kA

N

5STB 24Q2800

5STB 24Q2800.pdf

2800 V

5840 A

2630 A

46 kA

Q

5STB 25U5200

5STB 25U5200.pdf

N/A

4400 A

1980 A

45 kA

U